NCE85H21C pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.1 1 nce n-channel enhancement mode power mosfet description the NCE85H21C uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in automotive applications and a wide variety of other applications. general features v dss =85v,i d =210a r ds(on) < 4m ? @ v gs =10v good stability and uniformity with high e as special process technology for high esd capability high density cell design for ultra low rdson fully characterized avalanche voltage and current excellent package for good heat dissipation application automotive applications hard switched and high frequency circuits uninterruptible power supply 100% uis tested! 100% ? vds tested! schematic diagram marking and pin assignment to-220-3l top view package marking and ordering information device marking device device package reel size tape width quantity NCE85H21C NCE85H21C to-220 - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v dss 85 v gate-source voltage v gs 20 v drain current-continuous i d 210 note5 a drain current-continuous(t c =100 ) i d (100) 148 a pulsed drain current i dm 850 a maximum power dissipation p d 310 w derating factor 2.07 w/ single pulse avalanche energy (note 3) e as 2200 mj peak diode recovery dv/dt (note 4) dv/dt 5 v/ns operating junction and st orage temperature range t j ,t stg -55 to 175
NCE85H21C pb free product http://www.ncepower.com wuxi nce power semiconductor co., ltd page v1.1 2 thermal characteristic thermal resistance,junction-to-case (note 1) r jc 0.48 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 85 - - v zero gate voltage drain current i dss v ds =85v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 200 na on characteristics gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 3.2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =40a - 3.6 4 m ? forward transconductance g fs v ds =10v,i d =20a 35 - - s dynamic characteristics input capacitance c lss - 7200 - pf output capacitance c oss - 640 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 487 - pf switching characteristics turn-on delay time t d(on) - 15 - ns turn-on rise time t r - 124 - ns turn-off delay time t d(off) - 84 - ns turn-off fall time t f v dd =38v,i d =40a v gs =10v,r gen =1.2 ? (note2) - 78 - ns total gate charge q g - 180 - nc gate-source charge q gs - 34.5 - nc gate-drain charge q gd v ds =30v,i d =30a, v gs =10v (note2) - 70 - nc drain-source diode characteristics diode forward voltage v sd v gs =0v,i s =40a - - 1.2 v reverse recovery time t rr - 58 - ns reverse recovery charge qrr tj = 25c, if = 40a di/dt = 100a/ s (note2) - 87 - nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. surface mounted on fr4 board, t 10 sec. 2. pulse test: pulse width 400 s, duty cycle 2%. 3. eas condition tj=25 ,v dd =42.5v,v g =10v,l=0.5mh,rg=25 ? 4. isd 125a, di/dt 260a/ s, vdd v(br)dss tj 175c
wuxi nce power semiconductor co., ltd page v1.1 3 NCE85H21C pb free product http://www.ncepower.com test circuit 1) e as test circuit 2) gate charge test circuit 3) switch time test circuit
wuxi nce power semiconductor co., ltd page v1.1 4 NCE85H21C pb free product http://www.ncepower.com typical electrical and thermal characteristics vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance( ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a)
wuxi nce power semiconductor co., ltd page v1.1 5 NCE85H21C pb free product http://www.ncepower.com vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 power de-rating t j -junction temperature( ) figure 10 bv dss vs junction temperature t j -junction temperature( ) figure 11 v gs(th) vs junction temperature t j -junction temperature( ) figure 12 current de-rating i d - drain current (a) c capacitance (pf) normalized bvdss vth ( v ) i d - drain current (a) power dissipation (w)
wuxi nce power semiconductor co., ltd page v1.1 6 NCE85H21C pb free product http://www.ncepower.com square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance
wuxi nce power semiconductor co., ltd page v1.1 7 NCE85H21C pb free product http://www.ncepower.com to-220-3l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.9500 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref. 0.295 ref. 3.400 3.800 0.134 0.150
wuxi nce power semiconductor co., ltd page v1.1 8 NCE85H21C pb free product http://www.ncepower.com attention any and all nce power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliabilit y, such as life-support systems, aircraft' s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your nce power representative nearest you before us ing any nce power products described or contained herein in such applications. nce power assumes no responsibility for equipment failu res that result from us ing products at values that exceed, even momentarily, rated values (such as maximum ratings, operati ng condition ranges, or other parameters) listed in products specifications of any and al l nce power products described or contained herein. specifications of any and all nce powe r products described or contained herein st ipulate the performance, characteristics, and functions of the described products in the independent state, and ar e not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer?s products or equipment. to verify symptoms and states that cannot be evaluated in an in dependent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. strives to supply hi gh-quality high-reliability pr oducts. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce power believes information herein is accu rate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce power product that you intend to use. this catalog provides information as of sep.2010. specific ations and information herein are subject to change without notice.
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